Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
2. Initial stages of epitaxial growth of GaAs on (100) silicon
3. Strain relaxation in epitaxial overlayers
4. Generation of misfit dislocations in GaAs grown on Si
5. Dislocations in GaAs grown by ALMBE on (001) Si
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1. Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-08
2. Energetics of island formation of AlAs, GaAs, and InAs on Si(100);Journal of the Korean Physical Society;2012-03
3. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs;Applied Physics Letters;2012-01-02
4. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering;Applied Surface Science;2012-01
5. Morphology of island nuclei in epitaxial GaAs/Si;Materials Letters;1997-06
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