Relaxation dynamics and residual strain in metamorphic AlSb on GaAs-Reference-Cited by-同舟云学术

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Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Published:2012-01-02 Issue:1 Volume:100 Page:012103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ripalda J. M.,Sanchez A. M.,Taboada A. G.,Rivera A.,Alén B.,González Y.,González L.,Briones F.,Rotter T. J.,Balakrishnan G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3674986

Reference16 articles.

1. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

2. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

3. Interfacial misfit array formation for GaSb growth on GaAs

4. Growth mechanisms of highly mismatched AlSb on a Si substrate

5. Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers

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1. Heteroepitaxial growth of GaSb interfacial misfit array on GaAs substrate by molecular beam epitaxy;Journal of Crystal Growth;2023-08

2. Antimonidation of ultrathin epitaxial aluminum nanofilms for metamorphic growth of Sb-based structures on GaAs substrates;Japanese Journal of Applied Physics;2020-02-28

3. LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE;Crystals;2019-11-28

4. Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers;Solar Energy Materials and Solar Cells;2018-10

5. Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates;Applied Physics Express;2018-03-28

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