Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates-Reference-Cited by-同舟云学术

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Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates

Published:2018-03-28 Issue:4 Volume:11 Page:045503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Huynh Sa Hoang,Ha Minh Thien Huu,Binh Do Huy,Nguyen Tuan Anh,Luc Quang Ho,Chang Edward Yi

Funder

Ministry of Science and Technology, Taiwan

Chung-Shan Institute of Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=4/a=045503/pdf

Reference20 articles.

1. Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

2. Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition

3. InGaSb: Single channel solution for realizing III–V CMOS

4. Engineering of strained III–V heterostructures for high hole mobility

5. Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

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1. Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells;Chinese Physics B;2023-03-01

2. The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition;Thin Solid Films;2019-01

3. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition;Applied Physics Express;2018-04-17

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