Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition

Published:2017-01-09 Issue:2 Volume:110 Page:022102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huynh Sa Hoang¹^ORCID,Ha Minh Thien Huu¹^ORCID,Do Huy Binh¹^ORCID,Nguyen Tuan Anh¹,Luc Quang Ho¹,Chang Edward Yi¹²³

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan

2. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan

3. International College of Semiconductor Technology, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973998

Reference30 articles.

1. Antimonide-based compound semiconductors for electronic devices: A review

2. Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy

3. Mobility enhancement in strained p-InGaSb quantum wells

4. New Mechanism for Dislocation Blocking in Strained Layer Epitaxial Growth

5. 2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers

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1. Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis;Journal of Vacuum Science & Technology B;2020-05

2. The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition;Thin Solid Films;2019-01

3. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition;Applied Physics Express;2018-04-17

4. Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates;Applied Physics Express;2018-03-28

5. Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition;Materials Research Express;2017-08-03

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