Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

Published:2016-09-05 Issue:10 Volume:109 Page:102107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huynh Sa Hoang¹^ORCID,Ha Minh Thien Huu¹^ORCID,Do Huy Binh¹^ORCID,Luc Quang Ho¹,Yu Hung Wei¹,Chang Edward Yi¹²

Affiliation:

1. Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.

2. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.

Funder

National Chung-Shan Institute of Science & Technology, Taiwan

TSMC, NCTU-UCB I-RiCE program, and Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962640

Reference25 articles.

1. Antimonide-based compound semiconductors for electronic devices: A review

2. Growth and Optimization of 2-μm InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

3. InGaSb photodetectors using an InGaSb substrate for 2μm applications

4. Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

5. Progress in Antimonide Based III-V Compound Semiconductors and Devices

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