Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate-Reference-Cited by-同舟云学术

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Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate

Published:2022-08 Issue:4 Volume:16 Page:490-496
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Surf. Investig.

Author:

Sazonov V. A.,Borgardt N. I.,Kukin V. N.,Kazakov I. P.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

https://link.springer.com/content/pdf/10.1134/S1027451022040164.pdf

Reference34 articles.

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2. J. Ramer, F. Ospald, G. von Freyman, and R. Beigang, Appl. Phys. Lett. 103, 021119 (2013). https://doi.org/10.1063/1.4813605

3. F. W. Smith, A. R. Calawa, C. Chen, M. J. Manfra, and L. J. Mahoney, IEEE Electron Dev. Lett. 54, 890 (1989). https://doi.org/10.1109/55.2046

4. X. Zheng, Y. Xu, R. Sobolewski, R. Adam, M. Mikulics, M. Siegel, and P. Kordos, Appl. Opt. 42, 1726 (2003). https://doi.org/10.1364/AO.42.001726

5. K. Ma, R. Ryohei, D. A. B. Miller, and J. S. Harris, Jr., IEEE J. Quantum Electron. 40, 800 (2004). https://doi.org/10.1109/JSTQE.2005.860991

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