Morphology of island nuclei in epitaxial GaAs/Si
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
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1. Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001);Surfaces and Interfaces;2024-01
2. Elucidating the interfacial nucleation of higher-index defect facets in technologically important GaP/Si(0 0 1) by azimuthal angle-resolved polarized Raman spectroscopy;Applied Surface Science;2021-07
3. Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates;Journal of Physics and Chemistry of Solids;2014-02
4. Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium;Nano Letters;2012-10-05
5. Growth of GaAs quantum dots on Si substrate with artificial topography by ion sputtering;Scripta Materialia;2001-05
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