Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
2. Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption
3. Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions
4. Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
5. Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
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1. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
2. AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment;Journal of Crystal Growth;2010-10
3. Sub-meV photoluminescence linewidth and >106cm2∕Vs electron mobility in AlGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates;Journal of Applied Physics;2006-05
4. Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates;Journal of Crystal Growth;2004-12
5. Superlattice Structures;Organometallic Vapor-Phase Epitaxy;1999
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