In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
2. Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials
3. Transport Phenomena Measurements in Epitaxial Reactors
4. PhD Thesis;Kisker,1981
5. The pyrolysis temperature of triethylgallium in the presence of arsine of trimethylaluminum
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