Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire-Reference-Cited by-同舟云学术

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Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire

Published:2022-08 Issue: Volume:592 Page:126737
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chou Ta-Shun,Bin Anooz Saud,Grüneberg Raimund,Dropka Natasha,Miller Wolfram,Tran Thi Thuy Vi,Rehm Jana,Albrecht Martin,Popp Andreas

Funder

European Commission

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

BMBF Berlin

European Regional Development Fund

Leibniz ScienceCampus EEGA

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference45 articles.

1. Brillouin zone and band structure of β-Ga2O3;Peelaers;Phys. Status Solidi B,2015

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics;Galazka;Semicond. Sci. Technol.,2018

3. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors;Klie;J. Appl. Phys.,2017

4. MBE grown Ga2O3 and its power device applications;Sasaki;J. Cryst. Growth.,2013

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors;Higashiwaki;Appl. Phys. Lett.,2012

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boosting computational thermodynamic analysis of the CVD of SiC coating via machine learning;Journal of Crystal Growth;2024-07

2. Review of machine learning applications for crystal growth research;Journal of Crystal Growth;2024-03

3. Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method;Crystals;2023-12-02

4. Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches;Journal of Applied Physics;2023-11-15

5. High-mobility 4 μm MOVPE-grown (100) β-Ga₂O₃ film by parasitic particles suppression;Japanese Journal of Applied Physics;2023-02-09

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