MgO-free surface of Mg-doped LPE InGaAs on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate
2. Cd-Doping in InxGa1-xAsyP1-yMixed Semiconductors Grown by Liquid-Phase Epitaxy
3. Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxy
4. Technical Digest 1979;Tabatabaie-Alavi,1979
5. LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-doping
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels inp‐type GaAs grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1988-11-15
2. Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy;Applied Physics Letters;1987-11-16
3. Thermionic currents and acceptor diffusion inp+‐In0.53Ga0.47As/n‐InP heterojunctions;Journal of Applied Physics;1987-09
4. Evaluation of magnesium and manganese as the P-type dopant for InP/InGaAs heterojunction transistors;Solid-State Electronics;1986-02
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