Thermionic currents and acceptor diffusion inp+‐In0.53Ga0.47As/n‐InP heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339581
Reference11 articles.
1. Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP
2. InGaAs/InAlAs heterojunction Schottky transistors grown by MBE
3. MgO-free surface of Mg-doped LPE InGaAs on InP
4. VA-8 Fabrication, characterization, and modeling of inverted mode InGaAs/InP heterojunction bipolar transistors
5. Measurement of the conduction band discontinuities of InGaAsP/InP heterojunctions using capacitance–voltage analysis
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1. Thermionic emission theory and diffusion theory applied to CdTe PV devices;Journal of Semiconductors;2015-01
2. Magnesium as p Dopant in InGaAs / InP Heterojunction Bipolar Transistors Grown by Metalorganic Vapor Phase Epitaxy;Journal of The Electrochemical Society;1992-04-01
3. A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications;Journal of Applied Physics;1991-01-15
4. High sensitivity In0.53Ga0.47As/InP heterojunction phototransistor;Applied Physics Letters;1990-09-17
5. Nonconventional electron diffusion current in GaAs/AlxGa1−xAsN‐p‐nheterojunction bipolar transistors with heavily doped base layers;Journal of Applied Physics;1989-03-15
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