Nonconventional electron diffusion current in GaAs/AlxGa1−xAsN‐p‐nheterojunction bipolar transistors with heavily doped base layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342774
Reference19 articles.
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5. Thermionic currents and acceptor diffusion inp+‐In0.53Ga0.47As/n‐InP heterojunctions
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physics for Device Simulations and its Verification by Measurements;Semiconductors;1994
2. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers;Solid-State Electronics;1991-05
3. Physics for numerical simulation of silicon and gallium arsenide transistors;Solid-State Electronics;1990-06
4. The effect of electron‐hole plasmas on the density of states of silicon and GaAs;Journal of Applied Physics;1989-11
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