Deep levels inp‐type GaAs grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342447
Reference42 articles.
1. Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds
2. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
3. Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy
4. An alternative Mg precursor for p-type doping of OMVPE grown material
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