An alternative Mg precursor for p-type doping of OMVPE grown material
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. The growth of Magnesium-doped GaAs by the Om-Vpe process
2. Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties
3. Metalorganic chemical vapor deposition of III‐V semiconductors
4. A study of p-type dopants for InP grown by adduct MOVPE
5. Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. Metallic Materials Deposition: Metal-Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal-Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.;Encyclopedia of Inorganic and Bioinorganic Chemistry;2011-12-15
3. Nanocomposites for thermoelectric power generation: rare-earth metal monoantimonide nanostructures embedded in InGaSb and InSbAs ternary alloys;Nanoepitaxy: Materials and Devices III;2011-09-08
4. Electrical Properties of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Using Molecular Beam Epitaxy;Journal of the Korean Physical Society;2009-02-14
5. Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD;Journal of Crystal Growth;2008-11
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