Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD-Reference-Cited by-同舟云学术

Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD

Published:2008-11 Issue:23 Volume:310 Page:4780-4785
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Feng Jun,Clement Ryan,Raynor Mark

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Impact of interface impurities on heterostructure field-effect transistors

2. The elimination of H2O and SiH4 in AsH3

3. Assessment of compensation ratio in high-purity GaAs using photoluminescence

4. M.W. Raynor, J. Lapenta, H. Spicer, Development in the measurement and removal of ultratrace germane contamination in high purity arsine, ICMOVPE-XIII Abstract, Miyazaki, Japan, 2006, pp. 397–398.

5. The effect of oxygen incorporation in semi‐insulating (AlxGa1−x)yIn1−yP

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