The effect of oxygen incorporation in semi‐insulating (AlxGa1−x)yIn1−yP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350396
Reference6 articles.
1. Signature of the gallium‐oxygen‐gallium defect in GaAs by deep level transient spectroscopy measurements
2. Use of oxygen‐doped AlxGa1−xAs for the insulating layer in MIS structures
3. Current‐voltage and capacitance‐voltage behavior of high‐resistivity (AlxGa1−x)yIn1−yP on GaAs
4. Improved quantification and detection limits for oxygen analysis in AlxGa1−x As/GaAs multilayers with secondary ion mass spectroscopy
5. Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy
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