Ar plasma induced deep levels in epitaxial n-GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3673322
Reference21 articles.
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1. p–n Structure Formed on the Surface of n-type GaAs by Low-Energy Ar+ Ions;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-10
2. Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts;Materials Science in Semiconductor Processing;2019-08
3. Lateral photovoltaic effect observed in doping-modulated GaAs/Al_03Ga_07As;Optics Express;2017-02-06
4. Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy;AIP Conference Proceedings;2014
5. Observation of picosecond carrier lifetimes in GaAs/AlGaAs single quantum wells grown at 630°C;Journal of Luminescence;2013-11
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