Investigations on the effect of alpha particle irradiation-induced defects near Pd/n-GaAs interface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer
2. Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs
3. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs
4. Investigations on the evaluation of schottky barrier diode parameters of the proton irradiated Ti/n-GaAs
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