Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts-Reference-Cited by-同舟云学术

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Published:2019-08 Issue: Volume:99 Page:23-27
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Taghizadeh F.,Janse van Rensburg P.J.,Ostvar K.,Meyer W.E.,Auret F.D.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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2. Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs;Leclerc,1996

3. Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers;Auret;Vacuum,1995

4. Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown n-GaAs;Auret;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,1992

5. “Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers,” Semicond;Vandenbroucke;Sci. Technol.,1987

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