Characterization of process‐induced defects and device properties of ion beam sputter‐deposited Mo contacts on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333418
Reference17 articles.
1. Refractory silicides for integrated circuits
2. Effects of ultrathin oxides in conducting MIS structures on GaAs
3. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
4. Electrical characteristics of sputtering-induced defects in n-type silicon
5. 2.2 Substrate surface damages by rf-sputtering
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3. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC;Materials Science in Semiconductor Processing;2016-08
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