Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide-Reference-Cited by-同舟云学术

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Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

Published:2017-11 Issue: Volume:421 Page:636-642
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lohner Tivadar,Serényi Miklós,Szilágyi Edit,Zolnai Zsolt,Czigány Zsolt,Khánh Nguyen Quoc,Petrik Péter,Fried Miklós

Funder

National Development Agency

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Substrate surface damages by rf-sputtering;Berg;Vacuum,1977

2. Effect of ion-beam sputter damage on Schottky barrier formation in silicon;Fonash;Appl. Phys. Lett.,1981

3. Characterization of process-induced defects and device properties of ion beam sputter-deposited Mo contacts on Si;Auret;J. Appl. Phys.,1984

4. Spectroscopic Ellipsometry: Principles and Applications;Fujiwara,2007

5. On determining the optical properties and layer structure from spectroscopic ellipsometric data using automated artifact minimization method;Budai;Thin Solid Films,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtered niobium pentoxide layers for optical applications;Thin Solid Films;2024-07

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