A mechanism of misfit dislocation reaction for GaInAs strained layers grown onto off-axis GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Strained N–Ga0.7Al0.3As/InxGa1-xAs/GaAs Modulation-Doped Structures
2. Influence of lattice misfit on heterojunction bipolar transistors with lattice‐mismatched InGaAs bases
3. Structure and recombination in InGaAs/GaAs heterostructures
4. Crystal Growth: Theory and Techniques;Olsen,1978
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