Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges-Reference-Cited by-同舟云学术

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Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges

Published:2019-04 Issue: Volume:512 Page:169-175
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mukherjee Kunal,Vaisman Michelle,Callahan Patrick G.,Lee Minjoo Larry

Funder

National Science Foundation

Division of Materials Research

TomKat Foundation

NASA Space Technology Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate;Kettler;Appl. Phys. Lett.,2006

2. InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions;Mawst;J. Cryst. Growth.,2013

3. Metamorphic transistors: Building blocks for hetero-integrated circuits;Lee;MRS Bull.,2016

4. Metamorphic epitaxy for multijunction solar cells;France;MRS Bull.,2016

5. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy;Beanland;Adv. Phys.,1996

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications;Applied Surface Science;2023-06

2. Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density;Journal of Applied Physics;2021-12-28

3. Inhomogeneous in-plane distribution of preferential glide planes of β dislocations in a metamorphic InGaAs solar cell;Applied Physics Express;2020-12-11

4. Correlation between open-circuit voltages and preferential glide planes of misfit dislocations of metamorphic InGaAs single junction solar cells grown on GaAs;Journal of Crystal Growth;2020-03

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