InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions-Reference-Cited by-同舟云学术

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InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

Published:2013-05 Issue: Volume:370 Page:230-235
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mawst L.J.,Kirch J.D.,Chang C.-C.,Kim T.,Garrod T.,Botez D.,Ruder S.,Kuech T.F.,Earles T.,Tatavarti R.,Pan N.,Wibowo A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. 1.6W high wall plug efficiency, continuous-wave room temperature quantum cascade laser emitting at 4.6μm;Lyakh;Applied Physics Letters,2008

2. Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power;Bai;Applied Physics Letters,2008

3. Highly temperature insensitive, deep-well 4.8μm emitting quantum cascade semiconductor lasers;Shin;Applied Physics Letters,2009

4. Ultra-low temperature sensitive deep-well quantum cascade lasers (λ—4.8μm) via uptapering conduction band edge of injector region;Shin;Electronics Letters,2009

5. Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers;Botez;Applied Physics Letters,2010

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3. High-Power Mid-Infrared (λ∼3-6 μm) Quantum Cascade Lasers;IEEE Photonics Journal;2022-02

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5. Cathodoluminescence Study of Dislocations in Step-Graded InGaP Buffer Layers of Metamorphic Single-Junction InGaAs Solar Cells;Journal of Electronic Materials;2020-06-18

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