Correlation between open-circuit voltages and preferential glide planes of misfit dislocations of metamorphic InGaAs single junction solar cells grown on GaAs-Reference-Cited by-同舟云学术

Correlation between open-circuit voltages and preferential glide planes of misfit dislocations of metamorphic InGaAs single junction solar cells grown on GaAs

Published:2020-03 Issue: Volume:533 Page:125432
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ogura Akio,Suzuki Hidetoshi,Imaizumi Mitsuru^ORCID

Funder

SHARP Corporation

AES Corporation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrates

3. Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP

4. High-quality metamorphic compositionally graded InGaAs buffers

5. Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

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5. Cathodoluminescence Study of Dislocations in Step-Graded InGaP Buffer Layers of Metamorphic Single-Junction InGaAs Solar Cells;Journal of Electronic Materials;2020-06-18