Carbon in undoped LEC semi-insulating GaAs; origin and melt composition dependence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Compensation mechanisms in GaAs
2. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
3. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
4. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
5. Carbon in semi‐insulating, liquid encapsulated Czochralski GaAs
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1. Distribution of Carbon in Large Diameter Semi-Insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski Technique;Advanced Materials Research;2012-02
2. Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux;MATERIALS TRANSACTIONS;2004
3. Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review;Crystal Research and Technology;2003-07
4. Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach;Journal of Crystal Growth;1999-03
5. Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP;Journal of Electronic Materials;1996-03
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