Distribution of Carbon in Large Diameter Semi-Insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski Technique

Author:

Wang Li Hua1,Hao Qiu Yan1,Wang Bing Zhang2,Sun Wei Zhong1,Liu Cai Chi1

Affiliation:

1. Hebei University of Technology

2. Cangzhou Normal University

Abstract

Carbon impurity concentration and dislocation density were investigated with optical microscopy and Fourier transform infrared absorption spectrometer in radial direction of large diameter (6-inch) undoped semi-insulating Gallium Arsenide (SI-GaAs) grown by liquid encapsulated Czochralski (LEC). The experimental results showed that their distributions are both “W”-shaped along wafer diameter, which is relatively higher on the center and lower near the center, but highest on the edge of the wafer. The nonuniformity distribution of thermal stress from growth process leads to the “W”-shaped distribution of dislocations in radial direction. The adsorption of matrix elastic strain field around dislocations induces the “W”-shaped distribution of carbon impurity. Dislocations adsorb carbon impurity and carbon impurity decorates dislocations. Dislocation density distribution affects carbon behavior.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference6 articles.

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2. Yuesheng Xu, Chunling Zhang. The identify of defects in SI-GaAs single crystal. Chinese Journal of Semiconductors, 24(2003)718-721.

3. Yunxin Qi, Chunxiang Jiang. Quantitative study of AB microscopic defects in semi-insulating GaAs single crystal. Military material scientific and engineering, 18(1953) 39-42.

4. Yuesheng Xu, TangLie, Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica, 53(2004)328-331.

5. Toshio Kikuta and Haruo Emori. carbon in undoped LEC semi-insulating GaAs: Origin and melt composition dependence, Journal of Crystal Growth, 76(1986)517-520.

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