Difference between the (001) facet and the vicinal planes in vapour phase epitaxial growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. The Effect of Orientation on the Electrical Properties of Epitaxial Gallium Arsenide
2. Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates
3. Proc. Second Intern. Symp. on Gallium Arsenide;Shaw,1968
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