Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

Published:2006-12 Issue:12 Volume:49 Page:1334-1343
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Lavrentieva L. G.,Vilisova M. D.,Bobrovnikova I. A.,Ivonin I. V.,Preobrazhenskii V. V.,Chaldyshev V. V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-006-0263-x.pdf

Reference34 articles.

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2. M. Kaminska, Z. Liliental-Weber, E. R. Weber, et al., Appl. Phys. Lett., 54, 1881–1883 (1989).

3. A. C. Warren, J. M. Woodal, J. L. Freeouf, et al., Appl. Phys. Lett., 57, 1331–1333 (1990).

4. D. C. Look, D. C. Valters, M. O. Manasreh, et al., Phys. Rev. B., 42, 3578–3580 (1990).

5. Kin Man Yu, M. Kaminska, Z. Liliental-Weber, et al., J. Appl. Phys., 72, No. 7, 2850–2856 (1992).

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