Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351538
Reference17 articles.
1. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
2. New MBE buffer used to eliminate backgating in GaAs MESFETs
3. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
4. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
5. Lattice site locations of excess arsenic atoms in gallium arsenide grown by low‐temperature molecular beam epitaxy
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