Surface effect of n-GaAs cap on the THz emission in LT-GaAs-Reference-Cited by-同舟云学术

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Surface effect of n-GaAs cap on the THz emission in LT-GaAs

Published:2018-05-28 Issue:14 Volume:29 Page:12436-12442
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Balgos Maria Herminia^ORCID,Jaculbia Rafael,Prieto Elizabeth Ann,Mag-usara Valynn Katrine,Tani Masahiko,Salvador Arnel,Estacio Elmer,Somintac Armando

Funder

Department of Science and Technology - Philippine Council for Industry, Energy and Emerging Technology Research and Development

Department of Science and Technology - Philippine Council for Industry, Energy and Emerging Technology Research and Development Grants-in-Aid

Commission on Higher Education - California Advanced Research Institute

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10854-018-9360-1/fulltext.html

Reference40 articles.

1. Z. Liliental-Weber, H. Cheng, S. Gupta, J. Whitaker, K. Nichols, F. Smith, Structure and carrier lifetime in lt-gaas. J. Electron. Mater. 22(12), 1465 (1993)

2. K.M. Yu, M. Kaminska, Z. Liliental-Weber, Characterization of gaas layers grown by low temperature molecular beam epitaxy using ion beam techniques. J. Appl. Phys. 72(7), 2850 (1992)

3. R. Matyi, M. Melloch, J. Woodall, High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide. Appl. Phys. Lett. 60(21), 2642 (1992)

4. M. Kaminska, Z. Liliental-Weber, E. Weber, T. George, J. Kortright, F. Smith, B.Y. Tsaur, A. Calawa, Structural properties of as-rich gaas grown by molecular beam epitaxy at low temperatures. Appl. Phys. Lett. 54(19), 1881 (1989)

5. A. Krotkus, R. Viselga, K. Bertulis, V. Jasutis, S. Marcinkevičius, U. Olin, Subpicosecond carrier lifetimes in gaas grown by molecular beam epitaxy at low substrate temperature. Appl. Phys. Lett. 66(15), 1939 (1995)

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1. Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer;Applied Physics Express;2020-08-01

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