Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer-Reference-Cited by-同舟云学术

Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer

Published:2020-08-01 Issue:8 Volume:13 Page:082012
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Prieto Elizabeth Ann^ORCID,De Los Reyes Alexander,Vistro Victor DC Andres,Cabello Neil Irvin,Faustino Maria Angela,Ferrolino John Paul,Vasquez John Daniel,Bardolaza Hannah,Afalla Jessica Pauline,Mag-usara Valynn Katrine,Kitahara Hideaki,Tani Masahiko,Somintac Armando,Salvador Arnel,Estacio Elmer

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/aba9a2/pdf

Reference37 articles.

1. Signatures and fingerprints

2. Understanding the Terahertz Spectra of Crystalline Pharmaceuticals: Terahertz Spectroscopy and Solid-State Density Functional Theory Study of (S)-(+)-Ibuprofen and (RS)-Ibuprofen

3. Laser terahertz-emission microscope for inspecting electrical faults in integrated circuits

4. Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope

5. THz imaging and sensing for security applications—explosives, weapons and drugs

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3. Novel GaAs-Based, MBE-Grown Materials for THz Photoconductive Antenna Emitter Research at the University of the Philippines;JSAP-OSA Joint Symposia 2021 Abstracts;2021