Defect formation in LT MBE InGaAs and GaAs-Reference-Cited by-同舟云学术

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Defect formation in LT MBE InGaAs and GaAs

Published:2004-01 Issue:S1 Volume:45 Page:S96-S102
ISSN:0022-4766
Container-title:Journal of Structural Chemistry
language:en
Short-container-title:J Struct Chem

Author:

Anisimova L. L.,Gutakovskii A. K.,Ivonin I. V.,Preobrazhenskii V. V.,Putyato M. A.,Semyagin B. R.,Subach S. V.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s10947-006-0101-6.pdf

Reference10 articles.

1. L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, and V. V. Chaldyshev, Izv. Vuzov, Fizika, 45, No. 8, 3–19 (2002).

2. Yu. S. Gordeev, V. M. Mikushkin, S. Yu. Nikonov, et al., Fizika Tverd. Tela, 38, No. 11, 3299–3307 (1996).

3. L. Hollan and C. Shiller, J. Cryst. Growth, 22, No. 3, 175–180 (1974).

4. M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, et al., FTP, 33, No. 8, 824–829 (1999).

5. E. I. Givargizov, Vapor Phase Growth of Whiskers and Platelets [in Russian], Moscow, Nauka, 1977.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy growth and optical properties of InAsSbBi;Journal of Applied Physics;2019-08-28

2. Terahertz Characteristics of InGaAs with Periodic InAlAs Insertion Layers;Applied Science and Convergence Technology;2018-11-30

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