Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures-Reference-Cited by-同舟云学术

Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures

Published:1994-10 Issue:3-4 Volume:143 Page:184-193
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sardela M.R.,Radamson H.H.,Ekberg J.O.,Sundgren J.-E.,Hansson G.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Silicon Germanium Heterobipolar Transistor Structures with Extremely High Base Doping

2. Boron delta doping in Si and Si0.8Ge0.2layers

3. Surface Segregation of Boron During Si-MBE Growth

4. Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

5. Kinetics of ordered growth of Si on Si(100) at low temperatures

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