Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
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3. Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion;Stolk;Appl Phys Lett,1995
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5. The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy (100) Si heterojunctions;Chang;Appl Phys Lett,1997
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