Deposition of InP particles on Si3N4 and SiO2 films by low pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Selective MOCVD epitaxy for optoelectronic devices
2. GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications
3. Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
4. Selective epitaxial growth of GaAs by low-pressure MOVPE
5. Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy
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