Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films-Reference-Cited by-同舟云学术

Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

Published:2019 Issue:7 Volume:7 Page:1871-1879
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Dujiao¹²³⁴^ORCID,Wu Feihong¹²³⁴,Ying Qi¹²³⁴,Gao Xinyu¹²³⁴,Li Nan¹²³⁴,Wang Kejing¹²³⁴,Yin Zongyou⁵⁶⁷⁸⁹^ORCID,Cheng Yonghong¹²³⁴,Meng Guodong¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Electrical Insulation and Power Equipment

2. Xi’an Jiaotong University

3. Xi’an 710049

4. China

5. Research School of Chemistry

6. The Australian National University

7. Canberra

8. Australian Capital Territory 2601

9. Australia

Abstract

A thickness-tunable, ultra-large, continuous and high-dielectric h-BN films, achieved by optimizing LPCVD growth parameters, exhibit highly promising perspectives to develop electrically reliable 2D microelectronics with an ultrathin feature.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

State Key Laboratory of Electrical Insulation and Power Equipment

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05345F

Reference64 articles.