Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces-Reference-Cited by-同舟云学术

Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces

Published:1987-07 Issue:1 Volume:84 Page:79-97
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thomsen M.,Ghaisas S.V.,Madhukar A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells

2. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

3. Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy

4. Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes

5. Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

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2. Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfaces;Progress in Surface Science;2001-02

3. Effects of strain on island scaling studied by Monte Carlo simulations;Surface Science;1996-08

4. MBE Growth Processes of Lattice-Matched Structures;Molecular Beam Epitaxy;1996

5. Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07