Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy

Published:1986-08 Issue:1-3 Volume:174 Page:606-614
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Yen M.Y.,Madhukar A.,Lewis B.F.,Fernandez R.,Eng L.,Grunthaner F.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Defects in epitaxial multilayers

2. Defects in epitaxial multilayers

3. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices

4. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD

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2. Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces;Advances in Scanning Probe Microscopy;2000

3. RHEED characterization of InAs/GaAs grown by MBE;Journal of Crystal Growth;1999-02

4. In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07

5. Surface reconstruction and morphology evolution in highly strained InAs epilayer growth on GaAs(0 0 1) surface;Journal of Crystal Growth;1997-05

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