Nucleation mechanisms for compound semiconductors grown on Si by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
2. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating
3. Defect Characterization of GaAs on Si Grown by MOCVD
4. Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
5. Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
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1. InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates;IEEE Journal of Selected Topics in Quantum Electronics;2013-07
2. GaP-nucleation on exact Si (001) substrates for III/V device integration;Journal of Crystal Growth;2011-01
3. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07
4. Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE;Journal of Crystal Growth;2010-04
5. Structural analysis of InxGa1 − xAs grown on Ge by low pressure metalorganic chemical vapour deposition;Journal of Crystal Growth;1996-04
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