Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102489
Reference7 articles.
1. Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices
2. Defect Characterization of GaAs on Si Grown by MOCVD
3. MOCVD growth and characterization of GaAs and GaP grown on Si substrates
4. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
5. Defects in epitaxial multilayers
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