Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth-Reference-Cited by-同舟云学术

Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

Published:2015-05-18 Issue:20 Volume:106 Page:202105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He Yunrui¹,Wang Jun¹^ORCID,Hu Haiyang¹,Wang Qi¹,Huang Yongqing¹,Ren Xiaomin¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funder

the 111 Project of China under Grant

the Doctoral Program of Higher Specialized Research Fund under Grant

the National Basic Research Program of China under Grant

the Natural Science Foundational Science and Technology Cooperation Project under Grant

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921621

Reference30 articles.

1. GaAs epitaxy on Si substrates: modern status of research and engineering

2. The Future of Silicon Photonics: Not So Fast? Insights From 100G Ethernet LAN Transceivers

3. Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers

4. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

5. Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

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