The growth of GaSb under microgravity conditions-Reference-Cited by-同舟云学术

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The growth of GaSb under microgravity conditions

Published:1985-05 Issue:3 Volume:71 Page:538-550
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lendvay E.,Hársy M.,Görög T.,Gyuró I.,Pozsgai I.,Koltai F.,Gyulai J.,Lohner T.,Mezey G.,Kótai E.,Pászti F.,Hrjapov V.T.,Kultchisky N.A.,Regel L.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Diffusion and solubility of Zn in GaSb

2. The liquid-phase epitaxial growth of low net donor concentration (5 × 10<sup>14</sup>-5 × 10<sup>15</sup>/cm<sup>3</sup>) GaSb for detector applications in the 1.3 - 1.6 µm region

3. Vapor-Phase Growth of Te-Doped GaSb

4. Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity;SCIENTIA SINICA Physica, Mechanica & Astronomica;2020-03-02

2. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10;Microgravity Science and Technology;2016-04-21

3. Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices;Crystal Research and Technology;2013-03-21

4. Bulk Crystal Growth Under Microgravity Conditions;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14

5. The "EÖTVÖS” Program in Space Research – 1979-1986;Materials Science Forum;2010-05

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