The "EÖTVÖS” Program in Space Research – 1979-1986-Reference-Cited by-同舟云学术

The "EÖTVÖS” Program in Space Research – 1979-1986

Published:2010-05 Issue: Volume:649 Page:11-16
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Gyulai J.¹,Gyúró I.¹

Affiliation:

1. MTA-Research Institute for Technical Physics and Materials Science

Abstract

A brief historical overview of one of Hungary's space projects on Soviet spacecrafts, the so-called "Eötvös" Project on semiconductor crystal growth, is given. Three experiments were proposed and performed: i) epitaxial growth of GaAs under flux, ii) seedless growth of GaSb, and as a control, iii) seeded growth of an InSb crystal. Because of thermal control problems of the furnace, only the growth of a structurally perfect GaSb bicrystal was a successful novelty. Results of structural and electrical analyses are briefly summarized. Finally, a list of related publications is given.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.649.11.pdf

Reference17 articles.

1. Ö. Lendvay.: Space technology experiments, (in Hungarian) Gépgyártástechnológia, 20 281 (1980).

2. M. Hársy, T. Görög, Ö. Lendvay, I. Gyúró, Space technological Experiments, Yearbook of the Res. Inst. for Tech. Phys. of Hung. Acad. Sci. 1980, Budapest, 1980, 26-28.

3. J. Gyulai et al., The space experiment Eötvös, Ten years of Hungarian Space Research (in Hungarian), MTA, Budapest, 1981, 72.

4. I. Gyúró et al., Recent experimental results of the space experiment Eötvös, (in Hungarian) MFKI Yearbook 1981, 26-28.

5. I. Gyuró, E. Lendvay et al., and V. T. Khryapov: The Growth of GaSb in Microgravity Condition, Intl. Astronautical Federation 83-153. New York (1983).