A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10-Reference-Cited by-同舟云学术

A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

Published:2016-04-21 Issue:2 Volume:28 Page:143-154
ISSN:0938-0108
Container-title:Microgravity Science and Technology
language:en
Short-container-title:Microgravity Sci. Technol.

Author:

Yu Jianding,Liu Yan,Pan Xiuhong,Zhao Hongyang,Kumar Velu Nirmal,Arivanandhan Mukannan,Momose Yoshimi,Hayakawa Yasuhiro,Zhang Xingwang,Luo Xinghong,Okano Yasuhiro,Inatomi Yuko

Publisher

Springer Science and Business Media LLC

Subject

Applied Mathematics,General Physics and Astronomy,General Engineering,Modeling and Simulation

Link

http://link.springer.com/content/pdf/10.1007/s12217-016-9493-x.pdf

Reference33 articles.

1. Croll, A., Müller, W., Nitsche, R.: Floating zone growth of surface coated silicon under microgravity. J. Crystal Growth 79, 65 (1986)

2. Danilewsky, A.N., Benz, K.W., Nishinaga, T.: Growth Kinetics in Space- and Eearth-grown InP and GaSb Crystals. J. Crystal Growth 99, 1282 (1990)

3. Duffar, T., Pret-harter, I., Dusserre, P.: Crucible de-wetting during Bridgman Growth of Semiconductors in Microgravity. J. Crystal Growth 100, 171 (1990)

4. Duffar, T., Serrano, M.D., Moore, C.D., Camassel, J., Contreras, S., Dusserre, P., Rivoallant, A., Tanner, B.K.: Bridgman Solidification of GaSb in Space. J. Crystal Growth 192, 63 (1998)

5. Eyer, A., Leiste, H., Nitsche, R.: Floating zone growth of silicon under microgravity in a sounding rocket. J. Crystal Growth 71, 173 (1985)

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