Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices-Reference-Cited by-同舟云学术

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Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Published:2013-03-21 Issue:4 Volume:48 Page:236-244
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Ebnalwaled A. A.,Duffar T.,Sylla L.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference43 articles.

1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

2. Interface band gap engineering in InAsSb photodiodes

3. InSb high-speed photodetectors grown on GaAs substrate

4. nBn detector, an infrared detector with reduced dark current and higher operating temperature

5. Influence of contact angle, growth angle and melt surface tension on detached solidification of InSb

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1. Melt Growth of Semiconductor Crystals Under Microgravity;Physical Science Under Microgravity: Experiments on Board the SJ-10 Recoverable Satellite;2019

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