Characterization of growth cells in In-doped GaP crystals by birefringent method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth and properties of large-diameter indium lattice-hardened GaAs crystals
2. Growth and characterization of GaAs alloyed with In and P
3. Semi-Insulating III—V Materials, Hakone, 1986;Shimizu,1986
4. Single crystal growth and characterization of isoelectronically-doped InP
5. Growth and defects of In-doped LEC GaP crystals
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1. Interface diagnostics: In-situ prediction of constitutional supercooling and backmelting by growth interface electromotive force;Materials & Design;2023-08
2. Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method;Journal of Crystal Growth;2018-06
3. Automated polarimeter–macroscope for optical mapping of birefringence, azimuths, and transmission in large area wafers. Part I. Theory of the measurement;Review of Scientific Instruments;1995-04
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