Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference53 articles.
1. Behavior of volatile dopants (P, Sb) in czochralski silicon growth;Porrini;J. Cryst. Growth,2017
2. Constitutional supercooling in Czochralski growth of heavily doped silicon crystals;Friedrich;Acta Physica Polonica A,2013
3. Constitutional supercooling in heavily As-doped Czochralski Si crystal growth;Taishi;J. Crys. Growth,2014
4. Impact of heavy doping with donors on CZ silicon properties;Porrini;Cryst. Res. Technol.,2014
5. Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt;Sueoka;J. Appl. Phys,2013
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