Growth and characterization of GaAs alloyed with In and P
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Mechanism for dislocation density reduction in GaAs crystals by indium addition
3. Nature of the 0.111‐eV acceptor level in indium‐doped silicon
4. Semi-Insulating III–V Materials;Shimizu,1986
5. J.B. Milstein, private communication, 1984.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large negative persistent photoconductivity of bulk GaAs1-xPx () single crystals;Materials Science and Engineering: B;1993-11
2. Large negative persistent photoconductivity of bulk GaAs1–xPx (x = 0.02–0.03) single crystals;European Materials Research Society Symposia Proceedings;1993
3. Characterization of growth cells in In-doped GaP crystals by birefringent method;Journal of Crystal Growth;1990-06
4. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS;Defect Control in Semiconductors;1990
5. Characterization of indium-doped liquid-encapsulated Czochralski GaP crystals by Birefringent method;Materials Science and Engineering: B;1989-12
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